Abstract: |
In recent years, selective Laser micromachining as a cost-effective and scalable method has been used for monolithic interconnection of organic photovoltaics (OPV) [1,2]. Due to their low costs, picosecond pulsed lasers are more often operated in the industry than femtosecond pulsed lasers. However, as the picosecond laser has a longer pulse duration, finding the process window for layer ablation via laser without harming the underlying layer is more challenging [3].
For monolithic interconnection via laser ablation, three different layers must be structured as defined below:
P1: ablation of the bottom electrode for galvanic isolation
P2: ablation of isolation of the absorber layer
P3: separation of the front contact
One of the processes in fabricating an OPV module is forming a conductive connection via the top and the bottom electrodes of neighbouring cells. During the ablation of the P2 and the P3 lines, damage to the bottom electrode has to be avoided; otherwise, the module's functionality may be negatively affected.
This work has developed a laser process that allows the monolithic interconnection with a picosecond laser (pulse length 10 ps, 532 nm wavelength) without harming underlying layers. Laser parameters such as fluence, number of overscans, pulse frequency, etc. have been optimized to do the required isolation without harming different cell layers. This way, the electrical resistance is small and does not affect device efficiency. OPVs with a layer sequence glass/ITO/PEDOT:PSS/absorber layer/PNDIT-F3NBr/Ag have been used. For P1 in the ITO layer (back electrode), increasing the laser power leads to more effective removal of ITO. However, too much laser energy leads to the ablation of glass. The optimal laser fluence per pulse is 0.08 J/cm2 at a beam diameter of 6.25 µm, a scanning speed of 1mm/s and a pulse frequency of 100 kHz. For P2, which separates the active organic layer, the ablation requires lower laser power as the organic layer decomposes faster than the inorganic layers (P1 and P3). However, laser power should be high enough to make an electrically isolating area but sufficiently low to prevent ablation of the ITO layer. Best results were obtained for a fluence per pulse of 0.00075 J/cm2, a scanning speed of 100 mm/s and a pulse frequency of 100 kHz. In P3, the silver top electrode is removed without harming underlying layers. With increasing laser power, metal removal becomes more thorough. Yet, more heat might diffuse to and harm the layers beneath. Laser scan speeds reduce local heating but require more overscans. At the same time, the pulse frequency needs to be optimized, because when it is too high: (1) plasma and/or particle shielding limit laser ablation efficiency, (2) lower precision results due to beam absorption/deflection, (3) heat accumulation leads to magma-like or messy ejection. For P3, best results were obtained via a fluence per pulse of 7.68 J/cm² at a beam diameter of 6.25 µm, a scanning speed of 1000 mm/s, and a pulse frequency of 100 kHz. The quality and effectiveness of the applied laser settings are examined by SEM, confocal laser microscopic images and electrical conductivity measurements.
1. Kubis P, Lucera L, Machui F, et al. Org Electron. 15(10):2256–63.
2. Lucera L, Machui F, Kubis P, et al. Energy Environ Sci. 9(1):89–94.
3. Kubis P, Winter J, Gavrilova A, et al. Prog Photovoltaics Res Appl. 27(6):479–90. |